IPP80N06S2L11AKSA2
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N06S2L11AKSA2 is a high-performance N-channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vds) of 55 V and a continuous drain current (Id) of 80 A at 25°C, with a maximum power dissipation of 158 W. The exceptionally low on-resistance (Rds On) of 10.7 mOhm at 40 A and 10 V gate drive makes it ideal for high-current switching applications. Key electrical parameters include a gate charge (Qg) of 80 nC at 10 V and input capacitance (Ciss) of 2075 pF at 25 V. The MOSFET operates within a temperature range of -55°C to 175°C and is packaged in a standard PG-TO220-3-1 through-hole configuration. This component is frequently utilized in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 93µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2075 pF @ 25 V |
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