IPP80N06S2L11AKSA1
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N06S2L11AKSA1 is an N-Channel Power MOSFET featuring a 55V drain-source voltage and a continuous drain current of 80A (Tc) at 25°C. This component offers a low on-resistance (Rds On) of 11mOhm at 60A and 10V gate-source voltage, with a maximum power dissipation of 158W (Tc). It operates within a temperature range of -55°C to 175°C (TJ) and is packaged in a TO-220-3 (PG-TO220-3-1) through-hole configuration. Key electrical parameters include a gate charge (Qg) of 80nC at 10V and input capacitance (Ciss) of 2075pF at 25V. This device is suitable for applications in automotive, industrial power control, and power supply systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 93µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2075 pF @ 25 V |
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