IPP80N06S2L06AKSA2
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N06S2L06AKSA2 is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The low on-resistance is specified at 6.3mOhm at 69A and 10V Vgs. It offers efficient switching with a typical gate charge (Qg) of 150 nC at 10V Vgs and an input capacitance (Ciss) of 3800 pF at 25V Vds. The device operates across a wide temperature range from -55°C to 175°C (TJ) and is housed in a standard PG-TO220-3-1 package, suitable for through-hole mounting. This MOSFET is utilized in demanding industries such as automotive, industrial power control, and power supply units.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 69A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 180µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 25 V |
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