IPP80N06S2L06AKSA1
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N06S2L06AKSA1 is an N-channel MOSFET with a Drain-Source Voltage (Vdss) of 55V. This component offers a continuous drain current (Id) of 80A at 25°C and a maximum power dissipation of 250W, both specified at the case temperature (Tc). The Rds(on) is rated at a maximum of 6.3mOhm at an Id of 69A and Vgs of 10V, featuring a low on-resistance optimized for high-efficiency power switching.
The MOSFET utilizes a through-hole mounting type in a PG-TO220-3-1 package. Key electrical characteristics include a gate charge (Qg) of 150 nC at 10V and an input capacitance (Ciss) of 3800 pF at 25V. The drive voltage range for optimal performance is 4.5V (minimum) to 10V. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial power supply, and motor control sectors where robust power handling and low conduction losses are critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 69A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 180µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 25 V |
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