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IPP80N06S2L05AKSA1

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IPP80N06S2L05AKSA1

MOSFET N-CH 55V 80A TO220-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPP80N06S2L05AKSA1 is an N-channel Power MOSFET designed for high-performance applications. This component features a Drain-Source voltage (Vdss) of 55 V and a continuous Drain current (Id) of 80 A at 25°C. The low on-resistance, specified at a maximum of 4.8 mOhm at 80 A and 10 V gate drive, ensures efficient power delivery. With a maximum power dissipation of 300 W at 25°C (Tc), this MOSFET is suitable for demanding thermal environments. The device is packaged in a PG-TO220-3-1, a through-hole mounting type, facilitating integration into existing board layouts. Typical applications for this component include automotive systems, industrial power supplies, and motor control. The operating temperature range is -55°C to 175°C (TJ). Key electrical parameters include a gate charge (Qg) of 230 nC at 10 V and input capacitance (Ciss) of 5700 pF at 25 V. The maximum gate-source voltage (Vgs) is ±20 V.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs4.8mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackagePG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5700 pF @ 25 V

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