IPP80N06S2L-07
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPP80N06S2L-07 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vds) of 55 V and a continuous drain current (Id) of 80 A at 25°C (Tc), with a maximum power dissipation of 210 W (Tc). The low on-resistance (Rds On) of 7 mOhm at 60 A and 10 V ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 130 nC at 10 V and an input capacitance (Ciss) of 3160 pF at 25 V. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO220-3-1 package suitable for through-hole mounting. Its robust design and low on-state resistance make it suitable for automotive, industrial, and power supply applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 150µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3160 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
