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IPP80N06S2H5AKSA2

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IPP80N06S2H5AKSA2

MOSFET N-CH 55V 80A TO220-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPP80N06S2H5AKSA2 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 80 A at 25°C, with a maximum power dissipation of 300 W at the same temperature. The device exhibits a low on-resistance (Rds On) of 5.5 mOhm at 80 A and 10 V, ensuring minimal conduction losses. Its typical applications span automotive, industrial power supplies, and motor control systems where robust performance and thermal management are critical. The IPP80N06S2H5AKSA2 is housed in a standard PG-TO220-3-1 package, facilitating through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 155 nC at 10 V and an input capacitance (Ciss) of 4400 pF at 25 V. The operating temperature range is from -55°C to 175°C (TJ).

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 230µA
Supplier Device PackagePG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4400 pF @ 25 V

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