IPP80N06S2H5AKSA1
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N06S2H5AKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) rating of 80A at 25°C. With a maximum on-resistance (Rds On) of 5.5mOhm at 80A and 10V Vgs, it offers excellent conduction losses. The device supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 4V at 230µA. Key parameters include a gate charge (Qg) of 155 nC at 10V and input capacitance (Ciss) of 4400 pF at 25V. Packaged in a PG-TO220-3-1 through-hole configuration, it can dissipate up to 300W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive, industrial power supplies, and power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 230µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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