IPP80N06S209AKSA1
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPP80N06S209AKSA1, an N-channel OptiMOS™ series Power MOSFET optimized for high-performance applications. This device features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 80 A at 25°C (Tc), with a maximum power dissipation (Pd) of 190 W (Tc). The low on-resistance (Rds On) of 9.1 mOhm at 50 A and 10 V gate drive voltage, coupled with a typical gate charge (Qg) of 80 nC at 10 V, ensures efficient switching. Designed for through-hole mounting in the standard PG-TO220-3-1 package, this MOSFET offers robust thermal performance with an operating junction temperature range of -55°C to 175°C. Its characteristics make it suitable for demanding power management solutions in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 125µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2360 pF @ 25 V |
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