IPP80N06S208AKSA2
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N06S208AKSA2 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 80A (Tc) at 25°C. The low on-resistance (Rds On) of 8mOhm at 58A and 10V gate drive ensures minimal conduction losses, while the maximum power dissipation of 215W (Tc) supports demanding thermal environments. With optimized gate charge (Qg) of 96 nC at 10V and input capacitance (Ciss) of 2860 pF at 25V, it facilitates fast switching speeds. The robust PG-TO220-3-1 package with through-hole mounting is suitable for applications in automotive, industrial power supplies, and motor control. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2860 pF @ 25 V |
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