IPP80N06S207AKSA4
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPP80N06S207AKSA4, offers a 55V drain-source breakdown voltage and a continuous drain current of 80A at 25°C (Tc). This device features a low on-resistance of 6.6mOhm maximum at 68A and 10V Vgs, facilitated by its advanced MOSFET technology. The IPP80N06S207AKSA4 is packaged in a standard PG-TO220-3-1 through-hole configuration, suitable for demanding power applications. It supports a gate-source voltage range of ±20V with a threshold voltage of 4V at 180µA. Key parameters include a typical input capacitance (Ciss) of 3400pF at 25V and a gate charge (Qg) of 110nC at 10V, enabling efficient switching performance. With a maximum power dissipation of 250W (Tc) and an operating junction temperature range of -55°C to 175°C, this component is well-suited for use in industrial power supplies, automotive electronics, and high-power switching applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 68A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 180µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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