IPP80N06S205AKSA1
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N06S205AKSA1 is an N-channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 80A at 25°C, this component offers a low on-resistance (Rds On) of 5.1mOhm at 80A and 10V Vgs. It supports a gate drive voltage up to 10V for optimal performance and has a maximum gate charge (Qg) of 170 nC at 10V. The device boasts a high power dissipation capability of 300W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a PG-TO220-3-1 through-hole configuration, the IPP80N06S205AKSA1 is suitable for sectors including automotive, industrial power control, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5110 pF @ 25 V |
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