IPP80N04S4L04AKSA1
MOSFET N-CH 40V 80A TO220-3-1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPP80N04S4L04AKSA1 is an N-Channel Power MOSFET featuring a 40V drain-source voltage and a continuous drain current of 80A at 25°C (Tc). This device exhibits a low on-resistance of 4.3mOhm maximum at 80A and 10V Vgs. The IPP80N04S4L04AKSA1 is packaged in a PG-TO220-3-1 through-hole configuration. Key characteristics include a maximum power dissipation of 71W (Tc), a gate charge of 60 nC (max) at 10V Vgs, and input capacitance of 4690 pF (max) at 25V Vds. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 35µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4690 pF @ 25 V |
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