IPP80N04S403AKSA1
MOSFET N-CH 40V 80A TO220-3-1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N04S403AKSA1 is an N-channel Power MOSFET designed for high-current applications. This component features a Drain to Source Voltage (Vdss) of 40 V and a continuous Drain Current (Id) of 80 A at 25°C. The device exhibits a low on-resistance (Rds On) of 3.7 mOhm at 80 A and 10 V, minimizing conduction losses. With a maximum power dissipation of 94 W (Tc), it is suitable for demanding thermal environments. The IPP80N04S403AKSA1 is packaged in a PG-TO220-3-1 through-hole configuration, facilitating straightforward board mounting. Key electrical parameters include a gate charge (Qg) of 66 nC and input capacitance (Ciss) of 5260 pF at specified voltages, enabling efficient switching performance. This MOSFET is widely utilized in automotive systems, power supplies, and industrial motor control. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 53µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5260 pF @ 25 V |