IPP80N04S306AKSA1
MOSFET N-CH 40V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N04S306AKSA1 is an N-Channel Power MOSFET designed for high-performance applications. This component features a 40V drain-source voltage and a continuous drain current capability of 80A at 25°C (Tc), with a maximum power dissipation of 100W (Tc). The low on-resistance of 5.7mOhm at 80A and 10V drive voltage, coupled with a gate charge of 47nC (max) at 10V, ensures efficient switching. With an input capacitance (Ciss) of 3250pF (max) at 25V, it is suitable for power conversion and motor control circuits. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is housed in a standard PG-TO220-3-1 package for through-hole mounting. This MOSFET is commonly utilized in automotive, industrial automation, and power supply sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 52µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
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