IPP80N04S2L03AKSA1
MOSFET N-CH 40V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N04S2L03AKSA1 is an N-channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 80A at 25°C, with a maximum power dissipation of 300W (Tc). The low on-resistance, specified at a maximum of 3.4mOhm at 80A and 10V Vgs, is achievable with gate drive voltages ranging from 4.5V to 10V. Key parameters include a gate charge (Qg) of 213 nC at 10V and an input capacitance (Ciss) of 6000 pF at 25V. The device is housed in a PG-TO220-3-1 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial, and power supply sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 213 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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