IPP80N04S2H4AKSA2
MOSFET N-CH 40V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N04S2H4AKSA2 is an N-Channel power MOSFET designed for demanding applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C. The low on-resistance of 4mOhm at 80A and 10V gate-source voltage (Vgs) ensures high efficiency. With a maximum power dissipation of 300W (Tc), it is suitable for high-power switching and power management solutions. The device is housed in a PG-TO220-3-1 package, facilitating through-hole mounting. Key electrical parameters include a gate charge (Qg) of 148 nC at 10V and input capacitance (Ciss) of 4400 pF at 25V. This MOSFET is utilized in industries such as automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 148 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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