IPP80N03S4L04AKSA1
MOSFET N-CH 30V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N03S4L04AKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a low Drain-Source On-Resistance (Rds(on)) of 3.7mOhm at 80A and 10V Vgs, facilitating reduced conduction losses. With a Drain-Source voltage (Vdss) of 30V and continuous drain current capability of 80A (Tc), it is suitable for power switching in demanding environments. The device boasts a maximum power dissipation of 94W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ). Key parameters include gate charge (Qg) of 75 nC @ 10V and input capacitance (Ciss) of 5100 pF @ 25V. The IPP80N03S4L04AKSA1 is housed in a PG-TO220-3-1 package for through-hole mounting and is commonly utilized in automotive and industrial power supply designs.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 45µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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