IPP80N03S4L03AKSA1
MOSFET N-CH 30V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N03S4L03AKSA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 136W (Tc). The low on-resistance (Rds On) of 2.7mOhm at 80A and 10V gate-source voltage (Vgs) ensures high efficiency. Key parameters include a gate charge (Qg) of 140 nC (Max) at 10V Vgs and an input capacitance (Ciss) of 9750 pF (Max) at 25V Vds. The IPP80N03S4L03AKSA1 utilizes MOSFET technology and is housed in a PG-TO220-3-1 package suitable for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This component is frequently utilized in automotive systems and industrial power supplies.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 90µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9750 pF @ 25 V |
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