IPP80CN10NGHKSA1
MOSFET N-CH 100V 13A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80CN10NGHKSA1 is an N-Channel Power MOSFET housed in a PG-TO220-3 package designed for through-hole mounting. This device features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 13 A at 25°C. The on-resistance (Rds On) is a maximum of 80 mOhm at 13 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 11 nC (max) at 10 V and input capacitance (Ciss) of 716 pF (max) at 50 V. Power dissipation is rated at 31 W (Tc). This component is suitable for applications in power management and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 12µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 716 pF @ 50 V |
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