IPP77N06S3-09
MOSFET N-CH 55V 77A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP77N06S3-09 is a 55V N-Channel Power MOSFET in a PG-TO220-3-1 package. This device features a low Rds(on) of 9.1mOhm at 39A and 10V Vgs, facilitating high-efficiency power switching. With a continuous drain current of 77A (Tc) and a maximum power dissipation of 107W (Tc), it is suitable for demanding applications. Key parameters include Vgs(th) of 4V @ 55µA, Qg of 103 nC @ 10V, and Ciss of 5335 pF @ 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive systems, industrial power supplies, and motor control applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 39A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 55µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5335 pF @ 25 V |
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