IPP77N06S212AKSA1
MOSFET N-CH 55V 77A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPP77N06S212AKSA1 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 55 V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 77 A at 25°C (Tc). With a low on-state resistance (Rds(on)) of 12 mOhm at 38 A and 10 V gate-source voltage (Vgs), it minimizes conduction losses. The device offers a maximum power dissipation of 158 W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 60 nC at 10 V and an input capacitance (Ciss) of 1770 pF at 25 V. Packaged in a TO-220-3 through-hole configuration (PG-TO220-3-1), this MOSFET is suitable for power supply, motor control, and automotive applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 93µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
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