IPP70N10SL16AKSA1
MOSFET N-CH 100V 70A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' SIPMOS® IPP70N10SL16AKSA1 is an N-channel power MOSFET designed for demanding applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 70A at 25°C (Tc). With a maximum power dissipation of 250W (Tc), it offers robust performance. The Rds On is specified at a maximum of 16mOhm at 50A and 10V gate-source voltage. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is housed in a PG-TO220-3-1 package suitable for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 240 nC @ 10 V and input capacitance (Ciss) of 4540 pF @ 25 V. This device is utilized in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 2mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4540 pF @ 25 V |
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