IPP70N10S3L12AKSA2
MOSFET_(75V 120V(Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPP70N10S3L12AKSA2 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 70A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The Rds On is specified at 12.1mOhm at 70A and 10V, with a gate drive range of 4.5V to 10V. Optimized for efficiency, it exhibits a typical gate charge (Qg) of 80 nC at 10V and input capacitance (Ciss) of 5570 pF at 25V. The IPP70N10S3L12AKSA2 is qualified to AEC-Q101 standards, making it suitable for automotive applications. It is supplied in a PG-TO220-3-1 package for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.1mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 83µA |
| Supplier Device Package | PG-TO220-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5570 pF @ 25 V |
| Qualification | AEC-Q101 |