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IPP70N10S3L12AKSA1

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IPP70N10S3L12AKSA1

MOSFET N-CH 100V 70A TO220-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPP70N10S3L12AKSA1 is an N-Channel power MOSFET designed for demanding applications. This component features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 70 A at 25°C with a maximum power dissipation of 125 W (Tc). The low on-resistance (Rds On) of 12.1 mOhm at 70 A and 10 V gate-source voltage (Vgs) ensures efficient power transfer. Key electrical characteristics include a maximum gate charge (Qg) of 80 nC at 10 V and an input capacitance (Ciss) of 5550 pF at 25 V. The MOSFET supports a gate drive voltage range from 4.5 V to 10 V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 2.4 V at 83 µA. Operating temperature range is -55°C to 175°C (TJ). Supplied in a PG-TO220-3-1 package, this through-hole mounted device is suitable for industrial power supplies, automotive systems, and motor control applications.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs12.1mOhm @ 70A, 10V
FET Feature-
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id2.4V @ 83µA
Supplier Device PackagePG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5550 pF @ 25 V

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