IPP70N10S312AKSA1
MOSFET N-CH 100V 70A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP70N10S312AKSA1 is an N-channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 70 A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 11.6 mOhm at 70 A and 10 V gate-source voltage, contributing to minimized conduction losses. With a maximum power dissipation of 125 W (Tc) and an operating junction temperature range of -55°C to 175°C, it offers robust thermal performance. The IPP70N10S312AKSA1 is housed in a PG-TO220-3-1 package, suitable for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 66 nC at 10 V and an input capacitance (Ciss) of 4355 pF at 25 V. This MOSFET is utilized in sectors such as automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4355 pF @ 25 V |
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