IPP65R660CFDXKSA1
MOSFET N-CH 650V 6A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET IPP65R660CFDXKSA1 features a 650V drain-source voltage and 6A continuous drain current at 25°C. This device offers a maximum on-resistance of 660mOhm at 2.1A and 10V gate-source voltage. With a typical input capacitance (Ciss) of 615pF and gate charge (Qg) of 22nC, it is suitable for high-voltage switching applications. The PG-TO220-3 package facilitates through-hole mounting. This component is widely utilized in power factor correction (PFC) stages, switch-mode power supplies (SMPS), and server power supplies, as well as in industrial and consumer electronics. The maximum power dissipation is 62.5W at the case temperature.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V |