IPP65R660CFDAAKSA1
MOSFET N-CH 650V 6A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-channel power MOSFET, part number IPP65R660CFDAAKSA1. This device features a 650V drain-source breakdown voltage and a continuous drain current of 6A at 25°C (Tc). The Rds(on) is specified at a maximum of 660mOhm at 3.2A and 10V gate-source voltage. With a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 543 pF at 100V, this MOSFET is suitable for demanding applications. The power dissipation capability is 62.5W (Tc). Designed for through-hole mounting in a PG-TO220-3 package, this component operates across a temperature range of -40°C to 150°C (TJ). It is qualified to AEC-Q101 and is manufactured using MOSFET technology. This component is utilized in automotive and industrial power supply applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Supplier Device Package | PG-TO220-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 543 pF @ 100 V |
| Qualification | AEC-Q101 |
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