IPP65R600C6XKSA1
MOSFET N-CH 650V 7.3A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP65R600C6XKSA1 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 650V drain-source breakdown voltage and a continuous drain current of 7.3A at 25°C (Tc), with a maximum power dissipation of 63W (Tc). The device offers a low on-resistance of 600mOhm maximum at 2.1A and 10V Vgs. Key parameters include a gate charge (Qg) of 23 nC maximum at 10V and an input capacitance (Ciss) of 440 pF maximum at 100V. The IPP65R600C6XKSA1 is housed in a PG-TO220-3 package for through-hole mounting and operates within an ambient temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, server power, solar inverters, and industrial power applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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