IPP65R420CFDXKSA1
MOSFET N-CH 650V 8.7A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ series IPP65R420CFDXKSA1 is an N-channel Power MOSFET designed for high-voltage applications. This through-hole component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 8.7A at 25°C, with a maximum power dissipation of 83.3W. The device exhibits a low on-resistance (Rds On) of 420mOhm at 3.4A and 10V gate drive voltage. Key parameters include a gate charge (Qg) of 32 nC and an input capacitance (Ciss) of 870 pF. Operating within a temperature range of -55°C to 150°C, this MOSFET is suitable for power supply units, server and telecom power, and industrial applications. The component is supplied in a PG-TO220-3 package.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 340µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
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