IPP65R380C6XKSA1
MOSFET N-CH 650V 10.6A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel MOSFET, part number IPP65R380C6XKSA1, offers a 650 V drain-to-source voltage and a continuous drain current of 10.6 A at 25°C (Tc). This through-hole component features a maximum on-resistance of 380 mOhm at 3.2 A and 10 V, with a gate charge of 39 nC at 10 V. The IPP65R380C6XKSA1 is housed in a PG-TO220-3 package and supports a maximum power dissipation of 83 W (Tc). It is suitable for applications requiring high voltage switching, commonly found in power supply units, lighting, and industrial motor control. This device operates effectively across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |