IPP65R310CFDAAKSA1
MOSFET N-CH 650V 11.4A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP65R310CFDAAKSA1 is an N-Channel Power MOSFET designed for demanding applications. Featuring a 650V drain-source voltage and a continuous drain current of 11.4A at 25°C (Tc), this component offers a maximum power dissipation of 104.2W (Tc). The Rds On is specified at a maximum of 310mOhm at 4.4A and 10V gate-source voltage. With a gate charge of 41nC (max) at 10V and input capacitance of 1110pF (max) at 100V, it provides efficient switching characteristics. The device is housed in a PG-TO220-3 package for through-hole mounting. Qualified to AEC-Q101 standards, it is suitable for automotive applications and various power conversion systems. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104.2W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 440µA |
| Supplier Device Package | PG-TO220-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 100 V |
| Qualification | AEC-Q101 |
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