IPP65R280E6XKSA1
MOSFET N-CH 650V 13.8A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP65R280E6XKSA1 is a 650V N-Channel Power MOSFET. Designed for high efficiency applications, this device features a maximum continuous drain current of 13.8A at 25°C (Tc) and a maximum power dissipation of 104W (Tc). The Rds(on) is specified at 280mOhm at 4.4A and 10V gate drive. Key electrical parameters include a gate charge (Qg) of 45 nC (max) at 10V and input capacitance (Ciss) of 950 pF (max) at 100V. The MOSFET operates within a junction temperature range of -55°C to 150°C. Packaged in a PG-TO220-3 case for through-hole mounting, this component is suitable for use in power supply units, server applications, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
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