IPP65R190C6XKSA1
MOSFET N-CH 650V 20.2A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ IPP65R190C6XKSA1 is a 650V N-Channel Power MOSFET designed for high-efficiency applications. This component features a low Rds(on) of 190mOhm at 7.3A and 10V Vgs, contributing to reduced conduction losses. With a continuous drain current rating of 20.2A (Tc) and a maximum power dissipation of 151W (Tc), it offers robust performance. The device boasts a typical gate charge of 73 nC at 10V and an input capacitance of 1620 pF at 100V. Packaged in a PG-TO220-3 through-hole configuration, the IPP65R190C6XKSA1 is suitable for use in power supplies, solar inverters, and industrial motor drives. Its operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
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