IPP65R155CFD7XKSA1
HIGH POWER_NEWManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CFD7 series N-Channel Power MOSFET, IPP65R155CFD7XKSA1, is a 650 V device with a continuous drain current of 15A (Tc) and a maximum power dissipation of 77W (Tc). This through-hole mounted component features a low Rds On of 155mOhm at 6.4A and 10V gate drive. Key parameters include a gate charge of 28 nC at 10V and input capacitance of 1300 pF at 400V. The PG-TO220-3 package is designed for efficient thermal management. This MOSFET is suitable for demanding applications in power factor correction, switch mode power supplies, and industrial power systems.
Additional Information
Series: CoolMOS™ CFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 6.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 77W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 320µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1283 pF @ 400 V |
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