IPP65R110CFDXKSA1
MOSFET N-CH 700V 31.2A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPP65R110CFDXKSA1. This device features a 700 V drain-source breakdown voltage and a continuous drain current capability of 31.2 A at 25°C (Tc), with a maximum power dissipation of 277.8 W (Tc). The Rds(on) is specified at a maximum of 110 mOhm at 12.7 A and 10 V Vgs. Key parameters include a gate charge (Qg) of 118 nC at 10 V and input capacitance (Ciss) of 3240 pF at 100 V. Designed for through-hole mounting in a PG-TO220-3 package, this MOSFET is suitable for applications in power supply units, lighting, and industrial power conversion. It operates within a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of ±20V.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 277.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V |