IPP65R074C6XKSA1
MOSFET N-CH 650V 57.7A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP65R074C6XKSA1 is a 650V N-channel power MOSFET designed for high-efficiency power conversion applications. This component features a low on-resistance of 74mOhm at 13.9A and 10V gate drive, with a continuous drain current capability of 57.7A at 25°C. The device offers a maximum power dissipation of 480.8W (Tc) and a gate charge of 17nC at 10V. Its through-hole mounting package, PG-TO220-3, facilitates integration into various power supply designs. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in sectors such as industrial power supplies, server power, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 13.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480.8W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.4mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3020 pF @ 100 V |
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