IPP60R950C6XKSA1
MOSFET N-CH 600V 4.4A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ IPP60R950C6XKSA1 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a maximum continuous drain current of 4.4A (Tc) and a low on-resistance of 950mOhm at 1.5A, 10V. With a power dissipation capability of 37W (Tc), it is suitable for demanding power factor correction (PFC) and switch-mode power supply (SMPS) designs. Key parameters include a gate charge of 13 nC at 10V and an input capacitance of 280 pF at 100V. The component is housed in a PG-TO220-3 package, facilitating through-hole mounting. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is utilized across various industries, including consumer electronics, industrial automation, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
