IPP60R600P7XKSA1
MOSFET N-CH 650V 6A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-channel Power MOSFET, part number IPP60R600P7XKSA1. This device features a 650V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C (Tc). The Rds On is specified at a maximum of 600mOhm at 1.7A and 10V Vgs. Key parameters include a gate charge (Qg) of 9 nC (max) at 10V Vgs and an input capacitance (Ciss) of 363 pF (max) at 400V Vds. The maximum power dissipation is 30W (Tc). This component is housed in a PG-TO220-3 package for through-hole mounting. It is suitable for applications in power factor correction, switch mode power supplies, and solar inverters.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 363 pF @ 400 V |
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