IPP60R600P6XKSA1
MOSFET N-CH 600V 7.3A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ P6 series N-channel power MOSFET, part number IPP60R600P6XKSA1, offers a 600V drain-source voltage rating and a continuous drain current of 7.3A at 25°C. This through-hole component features a low on-resistance of 600mOhm maximum at 2.4A and 10V, optimized for efficient power conversion. With a maximum power dissipation of 63W at the case, it is suitable for demanding applications. Key parameters include a gate charge of 12 nC at 10V and input capacitance of 557 pF at 100V. This device is commonly utilized in power supply units, server power, industrial power, and solar inverter applications. The component is supplied in a PG-TO220-3 package.
Additional Information
Series: CoolMOS™ P6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 557 pF @ 100 V |
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