IPP60R600CPXKSA1
MOSFET N-CH 600V 6.1A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP60R600CPXKSA1 is a high-voltage N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 6.1A at 25°C (Tc). With a maximum on-resistance (Rds On) of 600mOhm at 3.3A and 10V gate-source voltage, it offers efficient power switching. The device supports a gate drive voltage of 10V and has a maximum gate charge (Qg) of 27 nC at 10V. Its input capacitance (Ciss) is a maximum of 550 pF at 100V. The IPP60R600CPXKSA1 is housed in a PG-TO220-3 package, suitable for through-hole mounting, and operates within an extended temperature range of -55°C to 150°C (TJ). It also offers a maximum power dissipation of 60W (Tc). This MOSFET finds application in power supply units, solar inverters, and industrial motor control systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 220µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 100 V |
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