IPP60R600C6XKSA1
MOSFET N-CH 600V 7.3A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies CoolMOS™ IPP60R600C6XKSA1 is a 600V N-Channel Power MOSFET. This device offers a continuous drain current of 7.3A at 25°C (Tc) and a maximum power dissipation of 63W (Tc). Key characteristics include a low Rds(on) of 600mOhm at 2.4A and 10V, and a gate charge of 20.5 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 440 pF at 100V. Designed for through-hole mounting, it utilizes the PG-TO220-3 package. This component is suitable for applications in power supplies, lighting, and industrial motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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