IPP60R520E6XKSA1
MOSFET N-CH 600V 8.1A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP60R520E6XKSA1 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a maximum continuous drain current of 8.1A at 25°C and a low on-resistance of 520mOhm at 2.8A, 10V. With a maximum power dissipation of 66W (Tc), it offers robust performance in demanding environments. The device is housed in a standard PG-TO220-3 package suitable for through-hole mounting, ensuring ease of integration into existing designs. Key parameters include a gate charge of 23.4 nC at 10V and an input capacitance of 512 pF at 100V. Suitable for applications in power supplies, industrial motor control, and lighting, this Infineon Technologies MOSFET provides reliable and efficient switching characteristics.
Additional Information
Series: CoolMOS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 230µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 512 pF @ 100 V |
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