IPP60R520CPXKSA1
MOSFET N-CH 650V 6.8A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP60R520CPXKSA1 is an N-channel power MOSFET designed for efficient power conversion. This device features a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 6.8 A at 25°C (Tc). The IPP60R520CPXKSA1 offers a maximum on-resistance (Rds On) of 520 mOhm at 3.8 A and 10 V gate-source voltage. With a maximum power dissipation of 66 W (Tc), it is suitable for applications requiring high voltage and moderate current handling. Key parameters include a gate charge (Qg) of 31 nC and input capacitance (Ciss) of 630 pF, both specified at standard test conditions. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-220-3 (PG-TO220-3) package for through-hole mounting. This component finds utility in switch mode power supplies, lighting, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 340µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 100 V |
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