IPP60R520C6XKSA1
MOSFET N-CH 600V 8.1A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ series IPP60R520C6XKSA1 is a 600 V N-Channel Power MOSFET designed for high-performance applications. This component features a maximum continuous drain current of 8.1 A at 25°C (Tc) and a maximum power dissipation of 66 W (Tc). The device offers a low on-resistance of 520 mOhm at 2.8 A and 10 V (Vgs), with a gate charge (Qg) of 23.4 nC at 10 V. Its input capacitance (Ciss) is a maximum of 512 pF at 100 V. The IPP60R520C6XKSA1 is housed in a PG-TO220-3 package for through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, lighting, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 230µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 512 pF @ 100 V |
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