IPP60R450E6XKSA1
MOSFET N-CH 600V 9.2A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP60R450E6XKSA1 is a 600 V N-Channel power MOSFET designed for high-efficiency applications. This component features a continuous drain current of 9.2 A (Tc) and a maximum power dissipation of 74 W (Tc). The IPP60R450E6XKSA1 offers a low on-resistance of 450 mOhm at 3.4 A and 10 V drive, with a gate charge of 28 nC at 10 V. Its input capacitance is a maximum of 620 pF at 100 V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a PG-TO220-3 package, suitable for through-hole mounting. This MOSFET is commonly utilized in power supply units, lighting, and industrial motor control systems.
Additional Information
Series: CoolMOS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 280µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 100 V |
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