Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

IPP60R380P6XKSA1

Banner
productimage

IPP60R380P6XKSA1

MOSFET N-CH 600V 10.6A TO220-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies CoolMOS™ P6 series N-Channel Power MOSFET, part number IPP60R380P6XKSA1, offers a 600V breakdown voltage and a continuous drain current of 10.6A at 25°C (Tc). This through-hole component features a low on-resistance of 380mOhm at 3.8A and 10V Vgs, with a Vgs(th) of 4.5V at 320µA. The MOSFET exhibits a gate charge of 19 nC and an input capacitance of 877 pF at 100V. With a maximum power dissipation of 83W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this TO-220-3 packaged device is suitable for applications in power supply units and industrial motor drives.

Additional Information

Series: CoolMOS™ P6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10.6A (Tc)
Rds On (Max) @ Id, Vgs380mOhm @ 3.8A, 10V
FET Feature-
Power Dissipation (Max)83W (Tc)
Vgs(th) (Max) @ Id4.5V @ 320µA
Supplier Device PackagePG-TO220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds877 pF @ 100 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IPP60R190P6XKSA1

MOSFET N-CH 600V 20.2A TO220-3

product image
IPA60R280P6XKSA1

MOSFET N-CH 600V 13.8A TO220-FP

product image
IPL60R360P6SATMA1

MOSFET N-CH 600V 11.3A 8THINPAK