IPP60R330P6XKSA1
MOSFET N-CH 600V 12A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS P6 series N-channel power MOSFET, part number IPP60R330P6XKSA1. This device features a 600 V drain-source voltage and a continuous drain current of 12 A at 25°C. The Rds(on) is specified at a maximum of 330 mOhm for a gate-source voltage of 10 V and drain current of 4.5 A. Key parameters include a gate charge (Qg) of 22 nC maximum at 10 V, and input capacitance (Ciss) of 1010 pF maximum at 100 V. The MOSFET is housed in a PG-TO220-3 package for through-hole mounting and offers a maximum power dissipation of 93 W at the case. This component is suitable for applications in power supplies and industrial applications.
Additional Information
Series: CoolMOS™ P6RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 370µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 100 V |
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