IPP60R299CPXKSA1
MOSFET N-CH 650V 11A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ family IPP60R299CPXKSA1 is an N-Channel power MOSFET. This device features a 650V drain-source breakdown voltage and a continuous drain current of 11A at 25°C (Tc). The on-resistance (Rds(on)) is specified at a maximum of 299mOhm at 6.6A and 10V Vgs. Key characteristics include a gate charge (Qg) of 29 nC at 10V and input capacitance (Ciss) of 1100 pF at 100V. The device offers a maximum power dissipation of 96W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). It is housed in a PG-TO220-3 package suitable for through-hole mounting. This component is commonly utilized in power supply units, solar inverters, and industrial motor drives.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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