IPP60R280E6XKSA1
MOSFET N-CH 600V 13.8A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, IPP60R280E6XKSA1, offers a 600V drain-source breakdown voltage and a continuous drain current of 13.8A at 25°C (Tc). This through-hole device features a low on-resistance of 280mOhm maximum at 6.5A and 10V Vgs. With a maximum power dissipation of 104W (Tc) and a maximum gate charge of 43 nC at 10V, it is designed for efficient switching applications. The IPP60R280E6XKSA1 is suitable for use in power factor correction, switched-mode power supplies, and solar inverter applications. It operates within a temperature range of -55°C to 150°C (TJ) and is supplied in a PG-TO220-3 package.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 430µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
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